Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices
Résumé
Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems. (C) 2014 AIP Publishing LLC.
Domaines
Mécanique [physics.med-ph]
Origine : Fichiers éditeurs autorisés sur une archive ouverte
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