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Graphene growth directly on functional substrate


Graphene is perhaps the most promising material ever discovered for microelectronics applications, but its preparation includes either high-temperature processing or film transfer, and sometimes both of them, which forbids for the moment its introduction into fabrication lines. In this communication we report a synthesis route involving exposure of nickel thin films deposited on silicon oxide to a mixture of methane and hydrogen activated by DC plasma at 450°C. In addition of the awaited graphene film formed at the surface of catalyst layer, we observed the formation of a second graphene film at the catalyst/silicon oxide interface. To our knowledge, no other team have yet reported graphene synthesis directly on a dielectric substrate at low temperature. With the idea of increasing the graphene structural quality, we studied the effect of additional post growth high temperature annealing. The films synthesized were characterized using Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).
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Origin : Files produced by the author(s)
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Dates and versions

hal-00525357 , version 1 (11-10-2010)


  • HAL Id : hal-00525357 , version 1


C. S. Lee, L. Baraton, Z. B. He, Jean-Luc Maurice, D. Pribat, et al.. Graphene growth directly on functional substrate. 2010. ⟨hal-00525357⟩
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