*. Guillaume, saint-girons@ec-lyon.fr 1 J. Heber, Nature, vol.459, p.28, 2009.

M. Gajek, S. Bibes, K. Fusil, J. Bouzehouane, A. Fontcuberta et al., Tunnel junctions with multiferroic barriers, Nature Materials, vol.85, issue.4, p.296, 2007.
DOI : 10.1038/nmat1860

L. Jia, V. Nagarajan, J. Q. He, L. Houben, T. Zhao et al., Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films, Nature Materials, vol.18, issue.1, p.64, 2007.
DOI : 10.1038/nmat1808

J. Li, Y. Wang, C. W. Lin, and . Nan, A magnetoelectric memory cell with coercivity state as writing data bit, Applied Physics Letters, vol.96, issue.16, p.162505, 2010.
DOI : 10.1063/1.3405722

A. Mckee, F. J. Walker, and M. F. Chisholm, Crystalline Oxides on Silicon: The First Five Monolayers, Physical Review Letters, vol.81, issue.14, p.3014, 1998.
DOI : 10.1103/PhysRevLett.81.3014

R. A. Mckee, F. J. Walker, and M. F. Chisholm, Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide, Science, vol.293, issue.5529, p.468, 2001.
DOI : 10.1126/science.293.5529.468

F. Wang, J. Wang, Q. Li, M. S. Moreno, X. Y. Zhou et al., on Si: experiments and simulations, Journal of Physics D: Applied Physics, vol.42, issue.8, p.85409, 2009.
DOI : 10.1088/0022-3727/42/8/085409

X. Li, Y. Hu, Z. Wei, X. Yu, R. Zhang et al., Two-dimensional growth of high-quality strontium titanate thin films on Si, Journal of Applied Physics, vol.93, issue.8, p.4521, 2003.
DOI : 10.1063/1.1562001

C. Delhaye, M. Merckling, G. El-kazzi, M. Saint-girons, Y. Gendry et al., Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001), Journal of Applied Physics, vol.100, issue.12, p.124109, 2006.
DOI : 10.1063/1.2407273

B. Mi, C. L. Jia, V. Vaithyanathan, L. Houben, J. Schubert et al., Atomic structure of the interface between SrTiO3 thin films and Si(001) substrates, Applied Physics Letters, vol.93, issue.10, p.101913, 2008.
DOI : 10.1063/1.2981524

P. Saint-girons, L. Regreny, G. Largeau, G. Patriarche, and . Hollinger, Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers, Applied Physics Letters, vol.91, issue.24, p.241912, 2007.
DOI : 10.1063/1.2824466

C. Saint-girons, P. Priester, G. Regreny, L. Patriarche, V. Largeau et al., Spontaneous compliance of the InP???SrTiO3 heterointerface, Applied Physics Letters, vol.92, issue.24, p.241907, 2008.
DOI : 10.1063/1.2944140
URL : https://hal.archives-ouvertes.fr/hal-00356956

J. Saint-girons, P. Cheng, L. Regreny, G. Largeau, G. Patriarche et al., Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems, Physical Review B, vol.80, issue.15, p.155308, 2009.
DOI : 10.1103/PhysRevB.80.155308

J. Yu, J. A. Ramdani, C. D. Curless, J. M. Overgaard, R. Finer et al., Epitaxial oxide thin films on Si(001), Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.18, issue.4, p.2139, 2000.
DOI : 10.1116/1.1303737

H. Hu, Y. Li, Y. Liang, Z. Wei, D. Yu et al., studies, Applied Physics Letters, vol.82, issue.2, p.203, 2003.
DOI : 10.1063/1.1536247
URL : https://hal.archives-ouvertes.fr/in2p3-00000307

J. Norga, C. Marchiori, C. Rossel, A. Guiller, J. P. Locquet et al., Solid phase epitaxy of SrTiO3 on (Ba,Sr)O???Si(100): The relationship between oxygen stoichiometry and interface stability, Journal of Applied Physics, vol.99, issue.8, p.84102, 2006.
DOI : 10.1063/1.2190078

G. Niu, B. Saint-girons, G. Vilquin, J. L. Delhaye, C. Maurice et al., Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation, Applied Physics Letters, vol.95, issue.6, p.62902, 2009.
DOI : 10.1063/1.3193548
URL : https://hal.archives-ouvertes.fr/hal-00663481

P. Warusawithana, C. Cen, C. R. Sleasman, J. C. Woicik, Y. Li et al., A Ferroelectric Oxide Made Directly on Silicon, Science, vol.324, issue.5925, p.367, 2009.
DOI : 10.1126/science.1169678

C. Woicik, H. Li, P. Zschack, E. Karapetrova, P. Ryan et al., by kinetically controlled sequential deposition, Physical Review B, vol.73, issue.2, p.24112, 2006.
DOI : 10.1103/PhysRevB.73.024112

S. Aguirre-tostado, A. Herrera-gomez, J. C. Woicik, R. Droopad, Z. Yu et al., thin films grown on Si(001), Physical Review B, vol.70, issue.20, p.201403, 2004.
DOI : 10.1103/PhysRevB.70.201403

O. Bell and G. Rupprecht, Elastic Constants of Strontium Titanate, Physical Review, vol.129, issue.1, p.90, 1963.
DOI : 10.1103/PhysRev.129.90

R. Lide, CRC Handbook of Chemistry and Physics, p.1297, 2000.

N. Lucas, H. Zabel, H. Morkoç, and H. Unlu, Anisotropy of thermal expansion of GaAs on Si(001), Applied Physics Letters, vol.52, issue.25, p.2117, 1988.
DOI : 10.1063/1.99553

J. Massies and N. Grandjean, Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials, Physical Review Letters, vol.71, issue.9, p.1411, 1993.
DOI : 10.1103/PhysRevLett.71.1411

A. Müller, W. Berlinger, and F. Waldner, Characteristic Structural Phase Transition in Perovskite-Type Compounds, Physical Review Letters, vol.21, issue.12, p.814, 1968.
DOI : 10.1103/PhysRevLett.21.814

A. Loetzsch, I. Lübke, E. Uschmann, V. Förster, M. Grosse et al., The cubic to tetragonal phase transition in SrTiO3 single crystals near its surface under internal and external strains, Applied Physics Letters, vol.96, issue.7, p.71901, 2010.
DOI : 10.1063/1.3324695

E. Cao, J. Sozontov, and . Zegehagen, Cubic to Tetragonal Phase Transition of SrTiO3 under Epitaxial Stress: An X-Ray Backscattering Study, physica status solidi (a), vol.78, issue.240, p.387, 2000.
DOI : 10.1002/1521-396X(200010)181:2<387::AID-PSSA387>3.0.CO;2-5

P. Guennou, J. Bouvier, D. Kreisel, and . Machon, up to 53 GPa, Physical Review B, vol.81, issue.5, p.54115, 2010.
DOI : 10.1103/PhysRevB.81.054115
URL : https://hal.archives-ouvertes.fr/hal-01067367

J. B. Antons, K. M. Neaton, D. Rabe, and . Vanderbilt, from first principles, Physical Review B, vol.71, issue.2, p.24102, 2005.
DOI : 10.1103/PhysRevB.71.024102

B. O. He, S. M. Wells, and . Shapiro, Thin Films, Physical Review Letters, vol.94, issue.17, p.176101, 2005.
DOI : 10.1103/PhysRevLett.94.176101
URL : https://hal.archives-ouvertes.fr/cea-01439762

A. Pertsev, A. K. Tagantsev, and N. Setter, epitaxial thin films, Physical Review B, vol.61, issue.2, p.825, 2000.
DOI : 10.1103/PhysRevB.61.R825

H. Haeni, P. Irvin, W. Chang, R. Uecker, P. Reiche et al., Room-temperature ferroelectricity in strained SrTiO3, Nature, vol.44, issue.7001, p.758, 2004.
DOI : 10.1103/PhysRevLett.85.1998