Characterization of silicon heterojunctions for Solar Cells - Archive ouverte HAL Access content directly
Journal Articles Nanoscale Research Letters Year : 2011

Characterization of silicon heterojunctions for Solar Cells

(1) , (1) , (2, 3) , (2) , (1) , (1) , (1)
1
2
3

Abstract

Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.
Fichier principal
Vignette du fichier
1556-276X-6-152.pdf (701.2 Ko) Télécharger le fichier
Origin : Publisher files allowed on an open archive
Loading...

Dates and versions

hal-00641696 , version 1 (16-11-2011)

Identifiers

Cite

Jean-Paul Kleider, José Alvarez, Martin Labrune, Pere Roca I Cabarrocas, Olga Alexandrovna Maslova, et al.. Characterization of silicon heterojunctions for Solar Cells. Nanoscale Research Letters, 2011, 6, pp.152. ⟨10.1186/1556-276X-6-152⟩. ⟨hal-00641696⟩
288 View
367 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More