Characterization of silicon heterojunctions for Solar Cells

Jean-Paul Kleider 1 José Alvarez 1 Martin Labrune 2, 3 Pere Roca I Cabarrocas 2 Olga Alexandrovna Maslova 1 Wilfried Favre 1 Marie-Estelle Gueunier-Farret 1
1 LGEP - Laboratoire de génie électrique de Paris
2 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
3 TOTAL S.A. - Gas & Power R&D
Abstract : Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.
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Jean-Paul Kleider, José Alvarez, Martin Labrune, Pere Roca I Cabarrocas, Olga Alexandrovna Maslova, et al.. Characterization of silicon heterojunctions for Solar Cells. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.152. ⟨10.1186/1556-276X-6-152⟩. ⟨hal-00641696⟩

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