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Journal articles
Characterization of silicon heterojunctions for Solar Cells
Abstract : Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.
Cited literature [13 references]
https://hal-polytechnique.archives-ouvertes.fr/hal-00641696
Contributor : Jacqueline Tran <>
Submitted on : Wednesday, November 16, 2011 - 2:26:00 PM
Last modification on : Wednesday, October 21, 2020 - 2:01:34 PM
Long-term archiving on: : Friday, November 16, 2012 - 11:06:23 AM
Contributor : Jacqueline Tran <>
Submitted on : Wednesday, November 16, 2011 - 2:26:00 PM
Last modification on : Wednesday, October 21, 2020 - 2:01:34 PM
Long-term archiving on: : Friday, November 16, 2012 - 11:06:23 AM
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1556-276X-6-152.pdf
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