Skip to Main content Skip to Navigation
Journal articles

Characterization of silicon heterojunctions for Solar Cells

Abstract : Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.
Complete list of metadata

Cited literature [13 references]  Display  Hide  Download
Contributor : Jacqueline Tran Connect in order to contact the contributor
Submitted on : Wednesday, November 16, 2011 - 2:26:00 PM
Last modification on : Thursday, June 17, 2021 - 3:47:11 AM
Long-term archiving on: : Friday, November 16, 2012 - 11:06:23 AM


Publisher files allowed on an open archive



Jean-Paul Kleider, José Alvarez, Martin Labrune, Pere Roca I Cabarrocas, Olga Alexandrovna Maslova, et al.. Characterization of silicon heterojunctions for Solar Cells. Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.152. ⟨10.1186/1556-276X-6-152⟩. ⟨hal-00641696⟩



Les métriques sont temporairement indisponibles