T. Mishima, M. Taguchi, H. Sakata, and E. Maruyama, Development status of high-efficiency HIT solar cells, Solar Energy Materials and Solar Cells, vol.95, issue.1, p.18, 2011.
DOI : 10.1016/j.solmat.2010.04.030

M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda et al., Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer), Japanese Journal of Applied Physics, vol.31, issue.Part 1, No. 11, p.3518, 1992.
DOI : 10.1143/JJAP.31.3518

M. Taguchi, Y. Tsunomura, H. Inoue, S. Taira, T. Nakashima et al., High efficiency HIT solar cell on thin (< 100 ?m ) silicon wafer, Proceedings of the 24th EPVSEC, pp.1690-1693, 2009.

F. Houze, O. Schneegans, and L. Boyer, Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes, Applied Physics Letters, vol.69, issue.13, 1975.
DOI : 10.1063/1.117179

P. Eyben, W. Vandervorst, D. Alvarez, M. Xu, and M. Fouchier, Probing Semiconductor Technology and Devices with Scanning Spreading Resistance Microscopy, Scanning Probe Microscopy, pp.31-88
DOI : 10.1007/978-0-387-28668-6_3

J. Kleider, C. Longeaud, R. Bruggemann, and F. Houze, Electronic and topographic properties of amorphous and microcrystalline silicon thin films, Thin Solid Films, vol.383, issue.1-2, p.57, 2001.
DOI : 10.1016/S0040-6090(00)01614-X

B. Rezek, T. Mates, E. Sipek, J. Stuchlik, A. Fejfar et al., Influence of combined AFM/current measurement on local electronic properties of silicon thin films, Journal of Non-Crystalline Solids, vol.299, issue.302, pp.299-302360, 2002.
DOI : 10.1016/S0022-3093(01)01012-2

J. Kleider, Y. Soro, R. Chouffot, A. Gudovskikh, R. Cabarrocas et al., High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions, Journal of Non-Crystalline Solids, vol.354, issue.19-25, p.2641, 2008.
DOI : 10.1016/j.jnoncrysol.2007.09.087

URL : https://hal.archives-ouvertes.fr/hal-00322289

W. Favre, M. Labrune, F. Dadouche, A. Gudovskikh, R. Cabarrocas et al., Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements, physica status solidi (c), vol.7, p.1037, 2010.
DOI : 10.1002/pssc.200982800

R. Stangl, M. Kriegel, and M. Schmidt, AFORS-HET, Version 2.2, a Numerical Computer Program for Simulation of Heterojunction Solar Cells and Measurements, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, pp.1350-1353, 2006.
DOI : 10.1109/WCPEC.2006.279681

A. Gudovskikh, S. Ibrahim, J. Kleider, J. Damon-lacoste, R. Cabarrocas et al., Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits. Thin Solid Films, p.7481, 2007.
URL : https://hal.archives-ouvertes.fr/hal-00321915

J. Kleider and A. Gudovskikh, Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements, Applied Physics Letters, vol.92, issue.16, p.162101, 2008.
DOI : 10.1063/1.2907695

URL : https://hal.archives-ouvertes.fr/hal-00350871

O. Maslova, J. Alvarez, E. Gushina, W. Favre, M. Gueunier-farret et al., Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions, Applied Physics Letters, vol.97, issue.25, p.252110, 2008.
DOI : 10.1063/1.3525166

URL : https://hal.archives-ouvertes.fr/hal-00557102