Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator - Archive ouverte HAL Access content directly
Journal Articles European Physical Journal: Applied Physics Year : 2012

Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator

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Abstract

The organic thin-film transistors (OTFTs) incorporating pentacene/SU-8 interface were fabricated and characterized. SU-8, a reliable epoxy-based photoresist, is tested as a potential highly-stable polymeric gate dielectric for OTFTs. The fabricated devices showed promising electrical performance with on-off ratio up to 10^7 and field-effect mobility up to 0.56 cm^2/V s. Several device characteristics are further analyzed. There existed a leakage current path due to the uncontrolled pentacene coverage and we revealed that precise alignment of the evaporation mask of pentacene is critical for eliminating this problem. Pentacene grain formation largely depended on the growth condition on the SU-8 surface and small-grain films offered outstanding performance possibly owing to enhanced inter-domain connections. Natural degradation of the OTFTs is also discussed in terms of environmental stability and the pentacene/SU-8 transistor operated with noticeable air stability under ambient conditions.
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hal-00655741 , version 1 (29-08-2013)

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Chang Hyun Kim, Denis Tondelier, Bernard Geffroy, Yvan Bonnassieux, Gilles Horowitz. Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator. European Physical Journal: Applied Physics, 2012, 57, pp.20201. ⟨10.1051/epjap/2011110272⟩. ⟨hal-00655741⟩
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