D. Braga and G. Horowitz, High-Performance Organic Field-Effect Transistors, Advanced Materials, vol.91, issue.14-15, p.1473, 2009.
DOI : 10.1002/adma.200802733

G. Horowitz, Tunneling Current in Polycrystalline Organic Thin-Film Transistors, Advanced Functional Materials, vol.13, issue.1, p.53, 2003.
DOI : 10.1002/adfm.200390006

A. Facchetti, M. H. Yoon, and T. J. Marks, Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics, Advanced Materials, vol.102, issue.134, p.1705, 2005.
DOI : 10.1002/adma.200500517

A. Del-campo and C. Greiner, SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography, Journal of Micromechanics and Microengineering, vol.17, issue.6, p.81, 2007.
DOI : 10.1088/0960-1317/17/6/R01

J. Melai, C. Salm, S. Smits, J. Visschers, and J. Schmitz, The electrical conduction and dielectric strength of SU-8, Journal of Micromechanics and Microengineering, vol.19, issue.6, p.65012, 2009.
DOI : 10.1088/0960-1317/19/6/065012

P. V. Pesavento, K. P. Puntambekar, C. D. Frisbie, J. C. Mckeen, and P. P. Ruden, Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility, Journal of Applied Physics, vol.99, issue.9, p.94504, 2006.
DOI : 10.1063/1.2197033

R. Ruiz, D. Choudhary, B. Nickel, T. Toccoli, K. C. Chang et al., Pentacene Thin Film Growth, Chemistry of Materials, vol.16, issue.23, p.4497, 2004.
DOI : 10.1021/cm049563q

S. Yang, K. Shin, and C. Park, The Effect of Gate-Dielectric Surface Energy on Pentacene Morphology and Organic Field-Effect Transistor Characteristics, Advanced Functional Materials, vol.4466, issue.11, p.1806, 2005.
DOI : 10.1002/adfm.200400486

S. Verlaak, V. Arkhipov, and P. Heremans, Modeling of transport in polycrystalline organic semiconductor films, Applied Physics Letters, vol.82, issue.5, p.745, 2003.
DOI : 10.1063/1.1541112

C. H. Kim, Y. Bonnassieux, and G. Horowitz, Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors, IEEE Electron Device Letters, vol.32, issue.9, p.1302, 2011.
DOI : 10.1109/LED.2011.2160249

URL : https://hal.archives-ouvertes.fr/hal-00630469

T. Richards and H. Sirringhaus, Bias-stress induced contact and channel degradation in staggered and coplanar organic field-effect transistors, Applied Physics Letters, vol.92, issue.2, p.23512, 2008.
DOI : 10.1063/1.2825584

S. H. Han, J. H. Kim, J. Jang, S. M. Cho, M. H. Oh et al., Lifetime of organic thin-film transistors with organic passivation layers, Applied Physics Letters, vol.88, issue.7, p.73519, 2006.
DOI : 10.1063/1.2174876

Y. Fu and F. Y. Tsai, Air-stable polymer organic thin-film transistors by solution-processed encapsulation, Organic Electronics, vol.12, issue.1, p.179, 2011.
DOI : 10.1016/j.orgel.2010.10.021

H. Jung, T. Lim, Y. Choi, M. Yi, J. Won et al., Lifetime enhancement of organic thin-film transistors protected with organic layer, Applied Physics Letters, vol.92, issue.16, p.163504, 2008.
DOI : 10.1063/1.2909717

S. Cipolloni, L. Mariucci, A. Valletta, D. Simeone, F. D. Angelis et al., Aging effects and electrical stability in pentacene thin film transistors, Thin Solid Films, vol.515, issue.19, p.7546, 2007.
DOI : 10.1016/j.tsf.2006.11.064

W. L. Kalb and B. Batlogg, Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods, Physical Review B, vol.81, issue.3, p.35327, 2010.
DOI : 10.1103/PhysRevB.81.035327

M. Mcdowell, I. G. Hill, J. E. Mcdermott, S. L. Bernasek, and J. Schwartz, Improved organic thin-film transistor performance using novel self-assembled monolayers, Applied Physics Letters, vol.88, issue.7, p.73505, 2006.
DOI : 10.1063/1.2173711