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Thermalization of photoexcited carriers in bismuth investigated by time-resolved terahertz spectroscopy and ab initio calculations

I. Timrov 1 T. Kampfrath 2, 3 Jérôme Faure 1 N. Vast 1 C.R. Ast 4 C. Frischkorn 2, 3 M. Wolf 2, 3 P. Gava 1 L. Perfetti 2, 1
1 LSI - Laboratoire des Solides Irradiés
2 Fachbereich Physik [Berlin]
3 FHI - Fritz-Haber-Institut der Max-Planck-Gesellschaft
4 Max-Planck-Institut für Festkörperforschung
Abstract : The charge carrier dynamics of photoexcited bismuth generates a Drude response that evolves over time. Our data show that the plasma frequency of bismuth displays an initial increase and a subsequent decay. We have performed ab initio calculations on bulk bismuth within the density functional theory and show that this peculiar behavior is due to local extrema in the valence and conduction bands. It follows that most of the carriers first accumulate in these extrema and reach the Fermi level only 0.6 ps after the photoexcitation. © 2012 American Physical Society.
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Submitted on : Tuesday, October 16, 2012 - 4:51:03 PM
Last modification on : Monday, January 18, 2021 - 12:20:05 PM

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I. Timrov, T. Kampfrath, Jérôme Faure, N. Vast, C.R. Ast, et al.. Thermalization of photoexcited carriers in bismuth investigated by time-resolved terahertz spectroscopy and ab initio calculations. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2012, 85 (15), pp.NA. ⟨10.1103/PhysRevB.85.155139⟩. ⟨hal-00739056⟩

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