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Thin crystalline silicon solar cells based on epitaxial films grown at 165 °C by RF-PECVD

Abstract : We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165 °C on highly doped p-type (1 0 0) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.5 μm. This absorber is responsible for photo-generated current whereas highly doped wafer behave like electric contact, as confirmed by external quantum efficiency measurements and simulations. A best conversion efficiency of 7% is obtained for a 2.4 μm thick cell with an area of 4 cm2, without any light trapping features. Moreover, the achievement of a fill factor as high as 78.6% is a proof that excellent quality of the epitaxial layers can be produced at such low temperatures.
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Contributor : Romain Cariou Connect in order to contact the contributor
Submitted on : Thursday, March 7, 2013 - 4:53:41 AM
Last modification on : Wednesday, March 27, 2019 - 4:20:04 PM
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Romain Cariou, Martin Labrune, Pere Roca I Cabarrocas. Thin crystalline silicon solar cells based on epitaxial films grown at 165 °C by RF-PECVD. Solar Energy Materials and Solar Cells, Elsevier, 2011, 95 (8), pp.2260-2263. ⟨10.1016/j.solmat.2011.03.038⟩. ⟨hal-00749873v2⟩



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