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Journal articles
Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition
G. Niu
1
W. W. Peng
G. Saint-Girons
1
J. Penuelas
1
Pascal Roy
2
J. B. Brubach
J.-L. Maurice
3
G. Hollinger
1
B. Vilquin
1
G. Niu 1
Author
W. W. Peng
Author
G. Saint-Girons 1
Author IdHAL : guillaume-saint-girons ORCID : https://orcid.org/0000-0002-3669-3406
J. Penuelas 1
Author IdHAL : jose-penuelas ORCID : https://orcid.org/0000-0002-5635-7346
Pascal Roy 2
Author
J. B. Brubach
Author
J.-L. Maurice 3
Author IdHAL : jean-lucmaurice ResearcherId : http://www.researcherid.com/rid/D-7043-2011 ORCID : https://orcid.org/0000-0002-5005-7174
G. Hollinger 1
Author
B. Vilquin 1
Author IdHAL : bertrand-vilquin ORCID : https://orcid.org/0000-0002-7404-0019
1
INL - H&N - INL - Hétéroepitaxie et Nanostructures (France)
- INL - Institut des Nanotechnologies de Lyon (France)
- CNRS - Centre National de la Recherche Scientifique : UMR5270 (France)
- INSA Lyon - Institut National des Sciences Appliquées de Lyon (20 Avenue Albert Einstein,
69621 Villeurbanne cedex - France)
- Université de Lyon (92 rue Pasteur - CS 30122, 69361 Lyon Cedex 07 - France)
- INSA - Institut National des Sciences Appliquées (France)
- ECL - École Centrale de Lyon (36 avenue Guy de Collongue - 69134 Ecully cedex - France)
- Université de Lyon (92 rue Pasteur - CS 30122, 69361 Lyon Cedex 07 - France)
- UCBL - Université Claude Bernard Lyon 1 (43, boulevard du 11 novembre 1918, 69622 Villeurbanne cedex - France)
- Université de Lyon (92 rue Pasteur - CS 30122, 69361 Lyon Cedex 07 - France)
- CPE - École supérieure de Chimie Physique Electronique de Lyon (Domaine Scientifique de la Doua Bâtiment Hubert Curien 43 Boulevard du 11 Novembre 1918 69616 Villeurbanne - France)
2
SSOLEIL - Synchrotron SOLEIL (L'Orme des Merisiers Saint-Aubin - BP 48 91192 GIF-sur-YVETTE CEDEX - France)
- CNRS - Centre National de la Recherche Scientifique : UR1 (France)
3
LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau] (bat. 408 Route de Saclay 91128 PALAISEAU CEDEX - France)
- X - École polytechnique (École polytechnique, 91128 Palaiseau Cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7647 (France)
Abstract : The work reports the direct epitaxial growth of SrTiO3 on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5×10−8 Torr to achieve a high-quality single crystalline SrTiO3 film and a coherent interface between SrTiO3 and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO3 commensurately grown on silicon undergoes a cubic-tetragonal phase transition.
Document type :
Journal articles
Complete list of metadata
https://hal-polytechnique.archives-ouvertes.fr/hal-00753321
Contributor : Jean-Luc Maurice <>
Submitted on : Monday, November 19, 2012 - 9:40:31 AM
Last modification on : Wednesday, June 2, 2021 - 11:02:06 AM
Contributor : Jean-Luc Maurice <>
Submitted on : Monday, November 19, 2012 - 9:40:31 AM
Last modification on : Wednesday, June 2, 2021 - 11:02:06 AM
Identifiers
- HAL Id : hal-00753321, version 1
- BIBCODE : 2011TSF...519.5722N
- DOI : 10.1016/J.TSF.2010.12.208
Collections
CNRS | INSA-LYON | EC-LYON | INL | X | X-PICM | LPICM | SYNCHROTRON-SOLEIL | UNIV-LYON1 | X-DEP-PHYS | INSA-GROUPE | UDL
Citation
G. Niu, W. W. Peng, G. Saint-Girons, J. Penuelas, Pascal Roy, et al.. Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition. Thin Solid Films, Elsevier, 2011, 519 (17), pp.5722-5725. ⟨10.1016/J.TSF.2010.12.208⟩. ⟨hal-00753321⟩
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