Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition

Abstract : The work reports the direct epitaxial growth of SrTiO3 on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5×10−8 Torr to achieve a high-quality single crystalline SrTiO3 film and a coherent interface between SrTiO3 and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO3 commensurately grown on silicon undergoes a cubic-tetragonal phase transition.
Complete list of metadatas

https://hal-polytechnique.archives-ouvertes.fr/hal-00753321
Contributor : Jean-Luc Maurice <>
Submitted on : Monday, November 19, 2012 - 9:40:31 AM
Last modification on : Wednesday, March 27, 2019 - 4:20:04 PM

Identifiers

Citation

G. Niu, W. W. Peng, G. Saint-Girons, J. Penuelas, P. Roy, et al.. Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition. Thin Solid Films, Elsevier, 2011, 519, pp.5722-5725. ⟨10.1016/J.TSF.2010.12.208⟩. ⟨hal-00753321⟩

Share

Metrics

Record views

263