High-Performance Organic Field-Effect Transistors, Advanced Materials, vol.91, issue.14-15, pp.14-15, 2009. ,
DOI : 10.1002/adma.200802733
Impact of electrode contamination on the ??-NPD/Au hole injection barrier, Organic Electronics, vol.6, issue.1, pp.47-54, 2005. ,
DOI : 10.1016/j.orgel.2005.02.003
Energy-Level Alignment at Organic/Metal and Organic/Organic Interfaces, Advanced Materials, vol.321, issue.43, pp.14-15, 2009. ,
DOI : 10.1002/adma.200802893
Contact effects in polymer transistors, Applied Physics Letters, vol.81, issue.15, pp.2887-2889, 2002. ,
DOI : 10.1063/1.1512950
Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy, Applied Physics Letters, vol.83, issue.26, pp.5539-5541, 2003. ,
DOI : 10.1063/1.1637443
Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature, Journal of Applied Physics, vol.96, issue.12, pp.7312-7324, 2004. ,
DOI : 10.1063/1.1806533
Improved morphology and charge carrier injection in pentacene field-effect transistors with thiol-treated electrodes, Journal of Applied Physics, vol.100, issue.11, p.114517, 2006. ,
DOI : 10.1063/1.2400507
Understanding contact behavior in organic thin film transistors, Applied Physics Letters, vol.97, issue.6, p.63307, 2010. ,
DOI : 10.1063/1.3479531
Analysis of Contact Effects in Inverted-Staggered Organic Thin-Film Transistors Based on Anisotropic Conduction, IEEE Transactions on Electron Devices, vol.57, issue.5, pp.986-994, 2010. ,
DOI : 10.1109/TED.2010.2044272
Analysis of the contact resistance in staggered, top-gate organic field-effect transistors, Journal of Applied Physics, vol.102, issue.9, p.94510, 2007. ,
DOI : 10.1063/1.2804288
Modeling the gate bias dependence of contact resistance in staggered polycrystalline organic thin film transistors, Organic Electronics, vol.10, issue.6, pp.1074-1081, 2009. ,
DOI : 10.1016/j.orgel.2009.05.019
Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors, IEEE Electron Device Letters, vol.32, issue.9, pp.1302-1304, 2011. ,
DOI : 10.1109/LED.2011.2160249
URL : https://hal.archives-ouvertes.fr/hal-00630469
Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength, Journal of Applied Physics, vol.109, issue.8, p.83710, 2011. ,
DOI : 10.1063/1.3574661
URL : https://hal.archives-ouvertes.fr/hal-00605026
Diffusion, Static Charges, and the Conduction of Electricity in Nonmetallic Solids by a Single Charge Carrier. I. Electric Charges in Plastics and Insulating Materials, Journal of Applied Physics, vol.26, issue.5, pp.498-508, 1955. ,
DOI : 10.1063/1.1722030
Contact resistance in organic thin film transistors, Solid-State Electronics, vol.47, issue.2, pp.297-301, 2003. ,
DOI : 10.1016/S0038-1101(02)00210-1
An experimental study of contact effects in organic thin film transistors, Journal of Applied Physics, vol.100, issue.2, p.24509, 2006. ,
DOI : 10.1063/1.2215132
Contact resistance in organic thin film transistors, Applied Physics Letters, vol.84, issue.2, pp.296-298, 2004. ,
DOI : 10.1063/1.1639937
High-Performance n-Channel Organic Thin-Film Transistor for CMOS Circuits Using Electron-Donating Self-Assembled Layer, IEEE Electron Device Letters, vol.31, issue.9, pp.1044-1046, 2010. ,
DOI : 10.1109/LED.2010.2052092
Hole mobility in organic single crystals measured by a ???flip-crystal??? field-effect technique, Journal of Applied Physics, vol.96, issue.4, pp.2080-2086, 2004. ,
DOI : 10.1063/1.1767292
Field-induced mobility degradation in pentacene thin-film transistors, Organic Electronics, vol.7, issue.6, pp.528-536, 2006. ,
DOI : 10.1016/j.orgel.2006.07.011
An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors, Journal of Applied Physics, vol.72, issue.2, pp.766-772, 1992. ,
DOI : 10.1063/1.351809
Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination, Journal of Applied Physics, vol.93, issue.10, pp.6117-6124, 2003. ,
DOI : 10.1063/1.1568157
Contact resistance and threshold voltage extraction in n-channel organic thin film transistors on plastic substrates, Journal of Applied Physics, vol.105, issue.8, p.84510, 2009. ,
DOI : 10.1063/1.3110021
Extracting Parameters from the Current-Voltage Characteristics of Organic Field-Effect Transistors, Advanced Functional Materials, vol.107, issue.11, pp.1069-1074, 2004. ,
DOI : 10.1002/adfm.200305122
Modeling of transport in polycrystalline organic semiconductor films, Applied Physics Letters, vol.82, issue.5, pp.745-747, 2003. ,
DOI : 10.1063/1.1541112
Effects of Grain Boundaries, Field-Dependent Mobility, and Interface Trap States on the Electrical Characteristics of Pentacene TFT, IEEE Transactions on Electron Devices, vol.51, issue.12, pp.1997-2003, 2004. ,
DOI : 10.1109/TED.2004.838333
Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors, Journal of Applied Physics, vol.87, issue.9, pp.4456-4463, 2000. ,
DOI : 10.1063/1.373091
Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods, Physical Review B, vol.81, issue.3, p.35327, 2010. ,
DOI : 10.1103/PhysRevB.81.035327
Subthreshold regime in rubrene single-crystal organic transistors, Applied Physics A, vol.139, issue.1, pp.193-201, 2009. ,
DOI : 10.1007/s00339-008-5008-y
Electronic structure and electrical properties of interfaces between metals and ?-conjugated molecular films, Journal of Polymer Science Part B: Polymer Physics, vol.94, issue.21, pp.2529-2548, 2003. ,
DOI : 10.1002/polb.10642
Very high-mobility organic single-crystal transistors with in-crystal conduction channels, Applied Physics Letters, vol.90, issue.10, p.102120, 2007. ,
DOI : 10.1063/1.2711393
p-Channel Organic Semiconductors Based on Hybrid Acene???Thiophene Molecules for Thin-Film Transistor Applications, Journal of the American Chemical Society, vol.127, issue.11, pp.3997-4009, 2005. ,
DOI : 10.1021/ja044078h