Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs

Abstract : We study the influence of the carrier dynamics on the transient reflectivity of low-temperature-grown GaAs samples. We report a precise modeling of the recorded reflectivity data, which exhibit multiexponential decays and changes in sign, using a standard point defect model and taking into account the effects of the band filling, band gap renormalization, and trap absorption. We show that the valence-band hole population plays an important role in the behavior of the signals, and that it must be taken into account in order to optimize low-temperature-grown GaAs-based devices. Cop. 2002 American Institute of Physics.
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Valentin Ortiz, J. Nagle, Antigoni Alexandrou. Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs. Applied Physics Letters, American Institute of Physics, 2002, 80 (14), pp.2505. ⟨10.1063/1.1463209⟩. ⟨hal-00836946⟩

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