Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications

F. Fossard (1) , F. H. Julien (1) , Emmanuel Peronne (2) , Antigoni Alexandrou (2) , J. Brault (3) , M. Gendry (3)

1 IEF - Institut d'électronique fondamentale
2 LOA - Laboratoire d'optique appliquée
3 LEOM - Laboratoire d'électronique, optoélectronique et microsystèmes

InAs nanostructures on InAlAs/InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs quantum wires or quantum dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along the [1 1 0] direction. The absorption at normal incidence reaches 26% for 10 layers of n-doped (1 x 10(12) cm(-2)) InAs elongated dots. We also report on femtosecond pump-probe experiments aimed at measuring the electron capture time. Typical times range from 3 ps for broad wires to 6 ps for narrow wires. (C) 2001 Elsevier Science B.V. All rights reserved.

F. Fossard, F. H. Julien, Emmanuel Peronne, Antigoni Alexandrou, J. Brault, et al.. Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications. Infrared Physics and Technology, 2001, 42 (3-5), pp.443-451. ⟨10.1016/S1350-4495(01)00104-9⟩. ⟨hal-00837029⟩