Theory and experiment of large numerical aperture objective Raman microscopy: application to the stress-tensor determination in strained cubic materials - Archive ouverte HAL Access content directly
Journal Articles Journal of Raman Spectroscopy Year : 2008

Theory and experiment of large numerical aperture objective Raman microscopy: application to the stress-tensor determination in strained cubic materials

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Abstract

We present the theory underlying the large numerical aperture objective micro-Raman backscattering experiment and apply it to the elaboration of a characterization methodology for the determination of the stress tensor in strained cubic semiconductor structures. The presented stress characterization technique consists in monitoring the variations of the stress-sensitive optical phonon peak position and linewidth while rotating stepwise the sample about its normal. The practical application of the technique is illustrated on a silicon-on-insulator (SOI) microelectronic structure demonstrating a plane stress-tensor determination.

Dates and versions

hal-00838065 , version 1 (24-06-2013)

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Razvigor Ossikovski, Quang Nguyen, Gennaro Picardi, Joachim Schreiber, Pierre Morin. Theory and experiment of large numerical aperture objective Raman microscopy: application to the stress-tensor determination in strained cubic materials. Journal of Raman Spectroscopy, 2008, 39, pp.661-672. ⟨10.1002/jrs.1911⟩. ⟨hal-00838065⟩
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