Theory and experiment of large numerical aperture objective Raman microscopy: application to the stress-tensor determination in strained cubic materials

Razvigor Ossikovski 1, * Quang Nguyen 1 Gennaro Picardi 1 Joachim Schreiber 2 Pierre Morin 3
* Corresponding author
1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 Raman Division
HORIBA France SAS [Villeneuve d'Ascq]
3 ST-TOURS - STMicroelectronics [Tours]
Abstract : We present the theory underlying the large numerical aperture objective micro-Raman backscattering experiment and apply it to the elaboration of a characterization methodology for the determination of the stress tensor in strained cubic semiconductor structures. The presented stress characterization technique consists in monitoring the variations of the stress-sensitive optical phonon peak position and linewidth while rotating stepwise the sample about its normal. The practical application of the technique is illustrated on a silicon-on-insulator (SOI) microelectronic structure demonstrating a plane stress-tensor determination.
keyword : Raman microscopy numerical aperture stress semiconductor
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Journal articles
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https://hal-polytechnique.archives-ouvertes.fr/hal-00838065
Contributor : Gennaro Picardi <>
Submitted on : Monday, June 24, 2013 - 4:28:14 PM
Last modification on : Wednesday, March 27, 2019 - 4:20:04 PM

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Razvigor Ossikovski, Quang Nguyen, Gennaro Picardi, Joachim Schreiber, Pierre Morin. Theory and experiment of large numerical aperture objective Raman microscopy: application to the stress-tensor determination in strained cubic materials. Journal of Raman Spectroscopy, Wiley, 2008, 39, pp.661-672. ⟨10.1002/jrs.1911⟩. ⟨hal-00838065⟩

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