Service interruption on Monday 11 July from 12:30 to 13:00: all the sites of the CCSD (HAL, EpiSciences, SciencesConf, AureHAL) will be inaccessible (network hardware connection).
Skip to Main content Skip to Navigation
Journal articles

Simple model for the polarization effects in tip-enhanced Raman spectroscopy

Abstract : The paper addresses the polarization properties of tip enhanced Raman spectroscopy TERS through an experimental study on 001 - and 111 -oriented crystalline Si samples and quantitatively describes them by using a simple phenomenological model. The model, conceptually similar to that used in surface-enhanced Raman scattering SERS , is based on the introduction of a phenomenological tip-amplification tensor accounting for the interaction of the tip with the electromagnetic field. It was found to be in a good agreement not only with our experimental data but also with the measurements and numerical simulations of other groups.
Document type :
Journal articles
Complete list of metadata

https://hal-polytechnique.archives-ouvertes.fr/hal-00838082
Contributor : Gennaro Picardi Connect in order to contact the contributor
Submitted on : Monday, June 24, 2013 - 4:42:51 PM
Last modification on : Wednesday, February 17, 2021 - 3:26:05 PM

Identifiers

Collections

Citation

Razvigor Ossikovski, Quang Nguyen, Gennaro Picardi. Simple model for the polarization effects in tip-enhanced Raman spectroscopy. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2007, 75, pp.045412. ⟨10.1103/PhysRevB.75.045412⟩. ⟨hal-00838082⟩

Share

Metrics

Record views

94