Simple model for the polarization effects in tip-enhanced Raman spectroscopy

Razvigor Ossikovski 1, * Quang Nguyen 1 Gennaro Picardi 1
* Corresponding author
1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
Abstract : The paper addresses the polarization properties of tip enhanced Raman spectroscopy TERS through an experimental study on 001 - and 111 -oriented crystalline Si samples and quantitatively describes them by using a simple phenomenological model. The model, conceptually similar to that used in surface-enhanced Raman scattering SERS , is based on the introduction of a phenomenological tip-amplification tensor accounting for the interaction of the tip with the electromagnetic field. It was found to be in a good agreement not only with our experimental data but also with the measurements and numerical simulations of other groups.
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Journal articles
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https://hal-polytechnique.archives-ouvertes.fr/hal-00838082
Contributor : Gennaro Picardi <>
Submitted on : Monday, June 24, 2013 - 4:42:51 PM
Last modification on : Wednesday, March 27, 2019 - 4:20:03 PM

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Razvigor Ossikovski, Quang Nguyen, Gennaro Picardi. Simple model for the polarization effects in tip-enhanced Raman spectroscopy. Physical Review B : Condensed matter and materials physics, American Physical Society, 2007, 75, pp.045412. ⟨10.1103/PhysRevB.75.045412⟩. ⟨hal-00838082⟩

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