Simple model for the polarization effects in tip-enhanced Raman spectroscopy

Razvigor Ossikovski; Quang Nguyen; Gennaro Picardi

Simple model for the polarization effects in tip-enhanced Raman spectroscopy

Razvigor Ossikovski ^{1, *} Quang Nguyen ¹ Gennaro Picardi ¹

* Corresponding author

1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]

Abstract : The paper addresses the polarization properties of tip enhanced Raman spectroscopy TERS through an experimental study on 001 - and 111 -oriented crystalline Si samples and quantitatively describes them by using a simple phenomenological model. The model, conceptually similar to that used in surface-enhanced Raman scattering SERS , is based on the introduction of a phenomenological tip-amplification tensor accounting for the interaction of the tip with the electromagnetic field. It was found to be in a good agreement not only with our experimental data but also with the measurements and numerical simulations of other groups.

Document type :

Journal articles

Domain :

Physics [physics] / Physics [physics] / Optics [physics.optics]

Complete list of metadatas

https://hal-polytechnique.archives-ouvertes.fr/hal-00838082
Contributor : Gennaro Picardi <>
Submitted on : Monday, June 24, 2013 - 4:42:51 PM
Last modification on : Wednesday, March 27, 2019 - 4:20:03 PM

Simple model for the polarization effects in tip-enhanced Raman spectroscopy

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Simple model for the polarization effects in tip-enhanced Raman spectroscopy

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