Nonequilibrium plasmons in optically excited semiconductors

M. Bonitz 1 J.-F. Lampin 2 F.-X. Camescasse 2 Antigoni Alexandrou 2
1 Fachbereich Physik [Rostock]
2 LOA - Laboratoire d'optique appliquée
Abstract : An analysis of the nonequilibrium plasmon spectrum of optically excited semiconductors is presented. It is shown that semiconductors with preexisting carrier populations, due, e.g., to a prepump or doping, may exhibit a rich collective excitation spectrum including additional plasmon modes. If these modes are weakly damped they give rise to an essential acceleration of thermalization processes. It is found that the most favorable conditions for this effect to appear are low temperature and p doping. These theoretical predictions are fully confirmed by results of comprehensive pump-probe experiments on bulk GaAs in the presence of a prepump and in doped samples. Cop. 2000 The American Physical Society
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https://hal-polytechnique.archives-ouvertes.fr/hal-00838176
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Submitted on : Wednesday, July 3, 2013 - 3:27:44 PM
Last modification on : Wednesday, July 3, 2019 - 10:48:02 AM

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M. Bonitz, J.-F. Lampin, F.-X. Camescasse, Antigoni Alexandrou. Nonequilibrium plasmons in optically excited semiconductors. Physical Review B : Condensed matter and materials physics, American Physical Society, 2000, 62 (23), pp.15724-15734. ⟨10.1103/PhysRevB.62.15724⟩. ⟨hal-00838176⟩

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