Theoretical intrinsic lifetime limit of shallow donor states in silicon

Abstract : The intrinsic lifetime of the 2p(0) shallow impurity state in silicon doped with P, As, Sb, or Bi has been computed by combining matrix elements of the electron-phonon coupling within the density-functional perturbation theory, with the envelope function approximation for the impurity wave functions. The theoretical lifetime due to the electronic interaction with intervalley phonons has been found to be 1.1 ns for P-doped silicon, and this theoretical limit is much longer than has been previously believed for the last five decades.
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Physical Review B : Condensed matter and materials physics, American Physical Society, 2010, 81, pp.245212. 〈10.1103/PhysRevB.81.245212〉
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https://hal-polytechnique.archives-ouvertes.fr/hal-01013724
Contributeur : Gaëlle Bruant <>
Soumis le : mercredi 25 juin 2014 - 15:46:44
Dernière modification le : jeudi 10 mai 2018 - 02:00:01

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V. Tyuterev, Jelena Sjakste, Nathalie Vast. Theoretical intrinsic lifetime limit of shallow donor states in silicon. Physical Review B : Condensed matter and materials physics, American Physical Society, 2010, 81, pp.245212. 〈10.1103/PhysRevB.81.245212〉. 〈hal-01013724〉

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