Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

Abstract : We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 106 cm−2 are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.
Complete list of metadatas

Cited literature [26 references]  Display  Hide  Download

https://hal-polytechnique.archives-ouvertes.fr/hal-01019905
Contributor : Romain Cariou <>
Submitted on : Monday, July 7, 2014 - 3:06:30 PM
Last modification on : Wednesday, March 27, 2019 - 4:20:04 PM
Long-term archiving on : Tuesday, October 13, 2015 - 4:40:30 PM

File

Cariou_-_Structural_properties...
Publisher files allowed on an open archive

Identifiers

Collections

Citation

Romain Cariou, Rosa Ruggeri, Xi Tan, Giovanni Mannino, Joaquim Nassar, et al.. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates. AIP Advances, American Institute of Physics- AIP Publishing LLC, 2014, pp.077103. ⟨10.1063/1.4886774⟩. ⟨hal-01019905⟩

Share

Metrics

Record views

439

Files downloads

588