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Journal articles
Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices
Abstract : Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems. (C) 2014 AIP Publishing LLC.
Cited literature [35 references]
https://hal-polytechnique.archives-ouvertes.fr/hal-01024364
Contributor : Gaëlle Bruant <>
Submitted on : Wednesday, July 16, 2014 - 9:53:50 AM
Last modification on : Friday, July 31, 2020 - 9:24:06 AM
Long-term archiving on: : Monday, November 24, 2014 - 3:02:18 PM
Contributor : Gaëlle Bruant <>
Submitted on : Wednesday, July 16, 2014 - 9:53:50 AM
Last modification on : Friday, July 31, 2020 - 9:24:06 AM
Long-term archiving on: : Monday, November 24, 2014 - 3:02:18 PM
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JourChemPhys_Valerie.pdf
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