Skip to Main content Skip to Navigation
New interface
Journal articles

Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices

Abstract : Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems. (C) 2014 AIP Publishing LLC.
Document type :
Journal articles
Complete list of metadata

Cited literature [35 references]  Display  Hide  Download
Contributor : Gaëlle Bruant Connect in order to contact the contributor
Submitted on : Wednesday, July 16, 2014 - 9:53:50 AM
Last modification on : Thursday, November 10, 2022 - 4:37:30 AM
Long-term archiving on: : Monday, November 24, 2014 - 3:02:18 PM


Publisher files allowed on an open archive



Matteo Bertocchi, E. Luppi, Elena Degoli, Valérie Véniard, Stefano Ossicini. Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices. Journal of Chemical Physics, 2014, 140 (21), pp.214705. ⟨10.1063/1.4880756⟩. ⟨hal-01024364⟩



Record views


Files downloads