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Negative Hall coefficient of ultrathin niobium in Si/Nb/Si trilayers
Abstract : Structural and transport properties of thin Nb layers in Si/Nb/Si trilayers with Nb layer thickness d from 1.1 nm to 50 nm have been studied. With decreasing thickness, the structure of the Nb layer changes from polycrystalline to amorphous at d 3.3 nm, while the superconducting temperature T c monotonically decreases. The Hall coefficient varies with d systematically but changes sign into negative in ultrathin films with d < 1.6 nm. The influence of boundary scattering on the relaxation rate of carriers, and band broadening in the amorphous films, may contribute to this effect.
Cited literature [20 references]
https://hal-polytechnique.archives-ouvertes.fr/hal-01074691
Contributor : Marcin Konczykowski Connect in order to contact the contributor
Submitted on : Friday, December 12, 2014 - 11:22:25 PM
Last modification on : Friday, March 5, 2021 - 3:05:02 PM
Long-term archiving on: : Friday, April 14, 2017 - 1:25:28 PM
Contributor : Marcin Konczykowski Connect in order to contact the contributor
Submitted on : Friday, December 12, 2014 - 11:22:25 PM
Last modification on : Friday, March 5, 2021 - 3:05:02 PM
Long-term archiving on: : Friday, April 14, 2017 - 1:25:28 PM
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PhysRevB.90.060505_Zaytseva.pd...
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