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Negative Hall coefficient of ultrathin niobium in Si/Nb/Si trilayers

Abstract : Structural and transport properties of thin Nb layers in Si/Nb/Si trilayers with Nb layer thickness d from 1.1 nm to 50 nm have been studied. With decreasing thickness, the structure of the Nb layer changes from polycrystalline to amorphous at d 3.3 nm, while the superconducting temperature T c monotonically decreases. The Hall coefficient varies with d systematically but changes sign into negative in ultrathin films with d < 1.6 nm. The influence of boundary scattering on the relaxation rate of carriers, and band broadening in the amorphous films, may contribute to this effect.
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Submitted on : Friday, December 12, 2014 - 11:22:25 PM
Last modification on : Wednesday, August 31, 2022 - 4:46:23 PM
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I Zaytseva, O Abal 'Oshev, P Dłuzewski, W Paszkowicz, L.Y. L.Y. Zhu, et al.. Negative Hall coefficient of ultrathin niobium in Si/Nb/Si trilayers. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90, pp.5. ⟨10.1103/PhysRevB.90.060505⟩. ⟨hal-01074691⟩



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