 |
École polytechnique Open archive |  |
 |
Journal articles
Negative Hall coefficient of ultrathin niobium in Si/Nb/Si trilayers
Abstract : Structural and transport properties of thin Nb layers in Si/Nb/Si trilayers with Nb layer thickness d from 1.1 nm to 50 nm have been studied. With decreasing thickness, the structure of the Nb layer changes from polycrystalline to amorphous at d 3.3 nm, while the superconducting temperature T c monotonically decreases. The Hall coefficient varies with d systematically but changes sign into negative in ultrathin films with d < 1.6 nm. The influence of boundary scattering on the relaxation rate of carriers, and band broadening in the amorphous films, may contribute to this effect.
Cited literature [20 references]
https://hal-polytechnique.archives-ouvertes.fr/hal-01074691
Contributor : Marcin Konczykowski <>
Submitted on : Friday, December 12, 2014 - 11:22:25 PM
Last modification on : Wednesday, November 18, 2020 - 7:20:08 PM
Long-term archiving on: : Friday, April 14, 2017 - 1:25:28 PM
Contributor : Marcin Konczykowski <>
Submitted on : Friday, December 12, 2014 - 11:22:25 PM
Last modification on : Wednesday, November 18, 2020 - 7:20:08 PM
Long-term archiving on: : Friday, April 14, 2017 - 1:25:28 PM
File
PhysRevB.90.060505_Zaytseva.pd...
Files produced by the author(s)