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Fundamental insights into the threshold characteristics of organic field-effect transistors
Abstract : We physically model the threshold characteristics of organic field-effect transistors (OFETs) using a two-dimensional finite-element method. The transfer characteristics are simulated for staggered OFETs with various electronic structures. A reliable method to extract a structure-unique threshold voltage is presented based on the second-derivative method. By changing the hole injection barrier height in such a manner that the flat-band voltage, defined from the difference of Fermi levels of gate and source electrode, is kept constant, we demonstrate a direct impact of the hole injection barrier height on the threshold voltage. Simulated charge carrier distribution shows the two-dimensional nature of channel creation process and physical insights into the threshold characteristics of OFETs.
https://hal-polytechnique.archives-ouvertes.fr/hal-01103862
Contributor : Chang-Hyun Kim Connect in order to contact the contributor
Submitted on : Thursday, January 15, 2015 - 3:20:28 PM
Last modification on : Friday, April 9, 2021 - 10:16:04 AM
Contributor : Chang-Hyun Kim Connect in order to contact the contributor
Submitted on : Thursday, January 15, 2015 - 3:20:28 PM
Last modification on : Friday, April 9, 2021 - 10:16:04 AM
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