Fundamental insights into the threshold characteristics of organic field-effect transistors

Abstract : We physically model the threshold characteristics of organic field-effect transistors (OFETs) using a two-dimensional finite-element method. The transfer characteristics are simulated for staggered OFETs with various electronic structures. A reliable method to extract a structure-unique threshold voltage is presented based on the second-derivative method. By changing the hole injection barrier height in such a manner that the flat-band voltage, defined from the difference of Fermi levels of gate and source electrode, is kept constant, we demonstrate a direct impact of the hole injection barrier height on the threshold voltage. Simulated charge carrier distribution shows the two-dimensional nature of channel creation process and physical insights into the threshold characteristics of OFETs.
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Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (3), pp.035106. 〈10.1088/0022-3727/48/3/035106〉
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https://hal-polytechnique.archives-ouvertes.fr/hal-01103862
Contributeur : Chang-Hyun Kim <>
Soumis le : jeudi 15 janvier 2015 - 15:20:28
Dernière modification le : mercredi 25 avril 2018 - 10:45:07

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Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz. Fundamental insights into the threshold characteristics of organic field-effect transistors. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (3), pp.035106. 〈10.1088/0022-3727/48/3/035106〉. 〈hal-01103862〉

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