Service interruption on Monday 11 July from 12:30 to 13:00: all the sites of the CCSD (HAL, Epiciences, SciencesConf, AureHAL) will be inaccessible (network hardware connection).
Skip to Main content Skip to Navigation
Journal articles

Fundamental insights into the threshold characteristics of organic field-effect transistors

Abstract : We physically model the threshold characteristics of organic field-effect transistors (OFETs) using a two-dimensional finite-element method. The transfer characteristics are simulated for staggered OFETs with various electronic structures. A reliable method to extract a structure-unique threshold voltage is presented based on the second-derivative method. By changing the hole injection barrier height in such a manner that the flat-band voltage, defined from the difference of Fermi levels of gate and source electrode, is kept constant, we demonstrate a direct impact of the hole injection barrier height on the threshold voltage. Simulated charge carrier distribution shows the two-dimensional nature of channel creation process and physical insights into the threshold characteristics of OFETs.
Document type :
Journal articles
Complete list of metadata

https://hal-polytechnique.archives-ouvertes.fr/hal-01103862
Contributor : Chang-Hyun Kim Connect in order to contact the contributor
Submitted on : Thursday, January 15, 2015 - 3:20:28 PM
Last modification on : Friday, April 9, 2021 - 10:16:04 AM

Links full text

Identifiers

Collections

Citation

Sungyeop Jung, Chang-Hyun Kim, yvan Bonnassieux, Gilles Horowitz. Fundamental insights into the threshold characteristics of organic field-effect transistors. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (3), pp.035106. ⟨10.1088/0022-3727/48/3/035106⟩. ⟨hal-01103862⟩

Share

Metrics

Record views

102