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Journal Articles Journal of Physics D: Applied Physics Year : 2015

Fundamental insights into the threshold characteristics of organic field-effect transistors

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Abstract

We physically model the threshold characteristics of organic field-effect transistors (OFETs) using a two-dimensional finite-element method. The transfer characteristics are simulated for staggered OFETs with various electronic structures. A reliable method to extract a structure-unique threshold voltage is presented based on the second-derivative method. By changing the hole injection barrier height in such a manner that the flat-band voltage, defined from the difference of Fermi levels of gate and source electrode, is kept constant, we demonstrate a direct impact of the hole injection barrier height on the threshold voltage. Simulated charge carrier distribution shows the two-dimensional nature of channel creation process and physical insights into the threshold characteristics of OFETs.

Dates and versions

hal-01103862 , version 1 (15-01-2015)

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Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz. Fundamental insights into the threshold characteristics of organic field-effect transistors. Journal of Physics D: Applied Physics, 2015, 48 (3), pp.035106. ⟨10.1088/0022-3727/48/3/035106⟩. ⟨hal-01103862⟩
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