Fundamental insights into the threshold characteristics of organic field-effect transistors

Sungyeop Jung 1 Chang-Hyun Kim 1 Yvan Bonnassieux 1 Gilles Horowitz 1
1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
Abstract : We physically model the threshold characteristics of organic field-effect transistors (OFETs) using a two-dimensional finite-element method. The transfer characteristics are simulated for staggered OFETs with various electronic structures. A reliable method to extract a structure-unique threshold voltage is presented based on the second-derivative method. By changing the hole injection barrier height in such a manner that the flat-band voltage, defined from the difference of Fermi levels of gate and source electrode, is kept constant, we demonstrate a direct impact of the hole injection barrier height on the threshold voltage. Simulated charge carrier distribution shows the two-dimensional nature of channel creation process and physical insights into the threshold characteristics of OFETs.
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Journal articles
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https://hal-polytechnique.archives-ouvertes.fr/hal-01103862
Contributor : Chang-Hyun Kim <>
Submitted on : Thursday, January 15, 2015 - 3:20:28 PM
Last modification on : Thursday, November 7, 2019 - 10:36:02 PM

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Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz. Fundamental insights into the threshold characteristics of organic field-effect transistors. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (3), pp.035106. ⟨10.1088/0022-3727/48/3/035106⟩. ⟨hal-01103862⟩

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