Fundamental insights into the threshold characteristics of organic field-effect transistors

Sungyeop Jung 1 Chang-Hyun Kim 1 Yvan Bonnassieux 1 Gilles Horowitz 1
1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
Abstract : We physically model the threshold characteristics of organic field-effect transistors (OFETs) using a two-dimensional finite-element method. The transfer characteristics are simulated for staggered OFETs with various electronic structures. A reliable method to extract a structure-unique threshold voltage is presented based on the second-derivative method. By changing the hole injection barrier height in such a manner that the flat-band voltage, defined from the difference of Fermi levels of gate and source electrode, is kept constant, we demonstrate a direct impact of the hole injection barrier height on the threshold voltage. Simulated charge carrier distribution shows the two-dimensional nature of channel creation process and physical insights into the threshold characteristics of OFETs.
Document type :
Journal articles
Complete list of metadatas
https://hal-polytechnique.archives-ouvertes.fr/hal-01103862
Contributor : Chang-Hyun Kim <>
Submitted on : Thursday, January 15, 2015 - 3:20:28 PM
Last modification on : Wednesday, March 27, 2019 - 4:20:04 PM

Identifiers

Collections

X | X-PICM | LPICM | PARISTECH | UNIV-PARIS-SACLAY | X-DEP-PHYS

Citation

Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz. Fundamental insights into the threshold characteristics of organic field-effect transistors. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (3), pp.035106. ⟨10.1088/0022-3727/48/3/035106⟩. ⟨hal-01103862⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

199

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD