Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures

Abstract : The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >104 and current density of up to 44 mAcm–2. Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.
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Article dans une revue
Nano Letters, American Chemical Society, 2015, 15 (1), pp.69-74. 〈10.1021/nl5029599〉
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https://hal-polytechnique.archives-ouvertes.fr/hal-01103874
Contributeur : Chang-Hyun Kim <>
Soumis le : jeudi 15 janvier 2015 - 15:32:57
Dernière modification le : jeudi 10 mai 2018 - 02:00:32

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Htay Hlaing, Chang-Hyun Kim, Fabio Carta, Chang-Yong Nam, Rob Barton, et al.. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures. Nano Letters, American Chemical Society, 2015, 15 (1), pp.69-74. 〈10.1021/nl5029599〉. 〈hal-01103874〉

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