Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells

R. Cariou; J. Tang; N. Ramay; R. Ruggeri; P. Roca I Cabarrocas

doi:10.1016/j.solmat.2014.11.018

Journal Articles Solar Energy Materials and Solar Cells Year : 2015

Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells

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R. Cariou

Function : Author

Laboratoire de physique des interfaces et des couches minces [Palaiseau]

J. Tang

Function : Author

Caritas Institute of Higher Education

N. Ramay

Function : Author

R. Ruggeri

Function : Author

Istituto per la Microelettronica e Microsistemi [Catania]

P. Roca I Cabarrocas

Function : Author

Laboratoire de physique des interfaces et des couches minces [Palaiseau]

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Engineering Sciences [physics]

Pere Roca i Cabarrocas : Connect in order to contact the contributor

https://hal-polytechnique.archives-ouvertes.fr/hal-01230699

Submitted on : Wednesday, November 18, 2015-7:43:16 PM

Last modification on : Wednesday, February 8, 2023-5:10:58 PM

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hal-01230699 , version 1 (18-11-2015)

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HAL Id : hal-01230699 , version 1
DOI : 10.1016/j.solmat.2014.11.018

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R. Cariou, J. Tang, N. Ramay, R. Ruggeri, P. Roca I Cabarrocas. Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells. Solar Energy Materials and Solar Cells, 2015, 134, ⟨10.1016/j.solmat.2014.11.018⟩. ⟨hal-01230699⟩

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Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells

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