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Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells

R. Cariou 1 J. Tang 2 N. Ramay R. Ruggeri 3 P. Roca I Cabarrocas 1 
1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
2 Caritas Institute of Higher Education
3 IMM - Istituto per la Microelettronica e Microsistemi [Catania]
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https://hal-polytechnique.archives-ouvertes.fr/hal-01230699
Contributor : Pere Roca i Cabarrocas Connect in order to contact the contributor
Submitted on : Wednesday, November 18, 2015 - 7:43:16 PM
Last modification on : Thursday, March 5, 2020 - 6:31:21 PM

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X | CNRS | X-PICM | X-DEP-PHYS | LPICM | UNIV-PARIS-SACLAY

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R. Cariou, J. Tang, N. Ramay, R. Ruggeri, P. Roca I Cabarrocas. Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells. Solar Energy Materials and Solar Cells, 2015, 134, ⟨10.1016/j.solmat.2014.11.018⟩. ⟨hal-01230699⟩

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