Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

Vladimir Neplokh (1) , Ahmed Ali (2) , François H. Julien (1) , Martin Foldyna (3) , Ivan Mukhin , George Cirlin (4) , Jean-Christophe Harmand (5) , Noëlle Gogneau (6) , Maria Tchernycheva (1)

1 IEF - Institut d'électronique fondamentale
2 UCL School of Pharmacy
3 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
4 A.F. Ioffe Physical-Technical Institute
5 LBE - Laboratoire de Biotechnologie de l'Environnement [Narbonne]
6 LPN-CNRS / UPR 20 - Laboratoire de Photonique et de Nanostructures.

Domains: Physics [physics]; Condensed Matter [cond-mat]

Vladimir Neplokh, Ahmed Ali, François H. Julien, Martin Foldyna, Ivan Mukhin, et al.. Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates. Materials Science in Semiconductor Processing, 2016, 55, pp.72 - 78. ⟨10.1016/j.mssp.2016.03.002⟩. ⟨hal-01401078⟩