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Stability of vicinal surfaces: beyond the quasistatic approximation

Abstract : We revisit the step bunching instability without recourse to the quasistatic approximation and show that the stability diagrams are significantly altered, even in the low-deposition regime where it was thought sufficient. In particular, steps are unstable against bunching for attachment-detachment limited growth. By accounting for the dynamics and chemical effects, we can explain the onset of step bunching in Sið111Þ-ð7 × 7Þ and GaAs(001) without resort to the inverse Schwoebel barrier or step-edge diffusion. Further, the size-scaling analysis of step-bunch growth, as induced by these two combined effects, agrees with the bunching regime observed at 750 °C in Si(111)-(7x7).
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https://hal-polytechnique.archives-ouvertes.fr/hal-02400748
Contributor : Nicolas Triantafyllidis <>
Submitted on : Monday, December 9, 2019 - 4:17:48 PM
Last modification on : Wednesday, April 14, 2021 - 3:37:53 AM

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  • HAL Id : hal-02400748, version 1

Citation

Laurent Guin, Michel Jabbour, Lucas Benoit-Marechal, Léopold Shaabani Ardali, Nicolas Triantafyllidis. Stability of vicinal surfaces: beyond the quasistatic approximation. Physical Review Letters, American Physical Society, In press, 124. ⟨hal-02400748⟩

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