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Journal Articles Physical Review Letters Year : 2020

Stability of vicinal surfaces: beyond the quasistatic approximation

Abstract

We revisit the step bunching instability without recourse to the quasistatic approximation and show that the stability diagrams are significantly altered, even in the low-deposition regime where it was thought sufficient. In particular, steps are unstable against bunching for attachment-detachment limited growth. By accounting for the dynamics and chemical effects, we can explain the onset of step bunching in Sið111Þ-ð7 × 7Þ and GaAs(001) without resort to the inverse Schwoebel barrier or step-edge diffusion. Further, the size-scaling analysis of step-bunch growth, as induced by these two combined effects, agrees with the bunching regime observed at 750 °C in Si(111)-(7x7).
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Dates and versions

hal-02400748 , version 1 (09-12-2019)

Identifiers

  • HAL Id : hal-02400748 , version 1

Cite

Laurent Guin, Michel E Jabbour, Lucas Benoit-Marechal, Léopold Shaabani Ardali, Nicolas Triantafyllidis. Stability of vicinal surfaces: beyond the quasistatic approximation. Physical Review Letters, In press, 124. ⟨hal-02400748⟩
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