Stability of vicinal surfaces: beyond the quasistatic approximation
Abstract
We revisit the step bunching instability without recourse to the quasistatic approximation and show that
the stability diagrams are significantly altered, even in the low-deposition regime where it was thought
sufficient. In particular, steps are unstable against bunching for attachment-detachment limited growth. By
accounting for the dynamics and chemical effects, we can explain the onset of step bunching in
Sið111Þ-ð7 × 7Þ and GaAs(001) without resort to the inverse Schwoebel barrier or step-edge diffusion.
Further, the size-scaling analysis of step-bunch growth, as induced by these two combined effects, agrees
with the bunching regime observed at 750 °C in Si(111)-(7x7).