Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates

Cyril Léon (1) , Sylvain Le Gall (1) , Marie-Estelle Gueunier-Farret (1) , Jean-Paul Kleider (1) , Pere Roca I Cabarrocas (2)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]

Epitaxial silicon layers were grown on highly doped c-Si substrates using the plasma-enhanced chemical vapour deposition process (PECVD) at low temperature (175 °C). The transport and defect-related properties of these epi-Si layers were characterized by current density-voltage (J–V) and capacitance–voltage (C–V) techniques. The results show that the epi-Si layers exhibit a non-intentional n-type doping with a low apparent doping density of about 2 × 10^15 cm−3. The admittance spectroscopy technique is used to investigate the presence of deep-level defects in the structure. An energy level at 0.2 eV below the conduction band has been found with a density in the range of 10^15 cm−3 which may explain the observed apparent doping profile.

Mots clés: Capacitance–voltage; current–voltage; impurity profile; epitaxial Si

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Energie électrique

Cyril Léon, Sylvain Le Gall, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Pere Roca I Cabarrocas. Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates. EPJ Photovoltaics, 2020, EPJ Photovoltaics, 11, pp.4. ⟨10.1051/epjpv/2020002⟩. ⟨hal-02472834⟩