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?. W. Chen, G. Hamon, R. Léal, J. Maurice, L. Largeau et al., Plasmaenhanced epitaxial growth of stable tetragonal Si, Journal of Crystal Growth

?. R. Léal, J. Dornstetter, F. Haddad, G. Poulain, J. Maurice et al., Silicon epitaxy by low-temperature RF-PECVD using SiF4/H2/Ar gas mixtures for emitter formation in crystalline solar cells, IEEE 42 nd Photovoltaic Specialist Conference (PVSC), pp.1-5, 2015.

?. R. Léal, J. Dornstetter, F. Haddad, B. Bruneau, R. Cariou et al., Epitaxial growth of silicon thin films by low temperature RF-PECVD fom SiF4/H2/Ar, European Procedure ? Invention Disclosure Form: R. Léal, E. Drahi, G. Poulain, P. Roca i Cabarrocas Distinctions ? Finalist for the Best Visual Presentation, 2014.

, ? Best Presentation Award, Workshop on Energy Transition, 2015.