 |
École polytechnique Open archive |  |
 |
Journal articles
Charge Distribution and Contact Resistance Model for Coplanar Organic Field-Effect Transistors
Abstract : We propose a theoretical description of the charge distribution and the contact resistance in coplanar organic field-effect transistors (OFETs). Based on the concept that the current in organic semiconductors is only carried by injected carriers from the electrodes, an analytical formulation for the charge distribution inside the organic layer was derived. We found that the contact resistance in coplanar OFETs arises from a sharp low-carrier-density zone at the source/channel edge because the gate-induced channel carrier density is orders of magnitude higher than the source carrier density. This image is totally different from the contact resistance in staggered OFETs, in which the contact resistance mainly originates from the resistance through the semiconductor bulk. The contact resistance was calculated through charge-distribution functions, and the model could explain the effect of the gate voltage and injection barrier on the contact resistance. Experimental data on pentacene OFETs were analyzed using the transmission-line method. We finally noticed that the gate-voltage-dependent mobility is a critical factor for proper understanding of the contact resistance in real devices.
Cited literature [32 references]
https://hal-polytechnique.archives-ouvertes.fr/hal-00770549
Contributor : Chang-Hyun Kim <>
Submitted on : Monday, January 7, 2013 - 10:11:23 AM
Last modification on : Thursday, March 5, 2020 - 6:27:28 PM
Long-term archiving on: : Monday, April 8, 2013 - 11:12:39 AM
Contributor : Chang-Hyun Kim <>
Submitted on : Monday, January 7, 2013 - 10:11:23 AM
Last modification on : Thursday, March 5, 2020 - 6:27:28 PM
Long-term archiving on: : Monday, April 8, 2013 - 11:12:39 AM
File
IEEE-CHKIM.pdf
Publisher files allowed on an open archive