Charge Distribution and Contact Resistance Model for Coplanar Organic Field-Effect Transistors

Chang Hyun Kim 1, * Yvan Bonnassieux 1 Gilles Horowitz 1
* Corresponding author
1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
Abstract : We propose a theoretical description of the charge distribution and the contact resistance in coplanar organic field-effect transistors (OFETs). Based on the concept that the current in organic semiconductors is only carried by injected carriers from the electrodes, an analytical formulation for the charge distribution inside the organic layer was derived. We found that the contact resistance in coplanar OFETs arises from a sharp low-carrier-density zone at the source/channel edge because the gate-induced channel carrier density is orders of magnitude higher than the source carrier density. This image is totally different from the contact resistance in staggered OFETs, in which the contact resistance mainly originates from the resistance through the semiconductor bulk. The contact resistance was calculated through charge-distribution functions, and the model could explain the effect of the gate voltage and injection barrier on the contact resistance. Experimental data on pentacene OFETs were analyzed using the transmission-line method. We finally noticed that the gate-voltage-dependent mobility is a critical factor for proper understanding of the contact resistance in real devices.
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Chang Hyun Kim, Yvan Bonnassieux, Gilles Horowitz. Charge Distribution and Contact Resistance Model for Coplanar Organic Field-Effect Transistors. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (1), pp.280. ⟨10.1109/ted.2012.2226887⟩. ⟨hal-00770549⟩

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