White Organic Light‐Emitting Diodes Based on Quench‐Resistant Fluorescent Organophosphorus Dopants

Damien Joly (1) , Denis Tondelier (2) , Valérie Deborde (1) , Wylliam Delaunay (1) , Anup Thomas (3) , Kotamarthi Bhanuprakash (3) , Bernard Geffroy (2, 4) , Muriel Hissler (1) , Régis Réau (1)

1 ISCR - Institut des Sciences Chimiques de Rennes
2 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
3 Inorganic and Physical Chemistry Division
4 LCSI - Laboratoire de Chimie des Surfaces et Interfaces

The control of the doping ratio of a blue-emitting matrix by an orange emitter with high accuracy still remains very challenging in the development of reproducible white organic light-emitting diodes (WOLEDs). In this work, the development of an organophosphorus dopant that presents a high doping rate in order to reach white emission is reported. The increase of the doping rate has a small impact on the CIE co-ordinates and on the EQE. These results are very appealing towards the development of "easy-to-make" WOLEDS.

Keywords: phospholes; white organic light-emitting diodes; 4'-bis(2; 2'-diphenylvinyl)biphenyl; doping layers; solid-state lighting

Domains: Chemical Sciences; Organic chemistry; Chemical Sciences; Material chemistry; Engineering Sciences [physics]; Electronics; Engineering Sciences [physics]; Materials

Damien Joly, Denis Tondelier, Valérie Deborde, Wylliam Delaunay, Anup Thomas, et al.. White Organic Light‐Emitting Diodes Based on Quench‐Resistant Fluorescent Organophosphorus Dopants. Advanced Functional Materials, 2011, 22 (3), pp.567-576. ⟨10.1002/adfm.201102005⟩. ⟨hal-00830380⟩