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Journal Articles Solar Energy Materials and Solar Cells Year : 2011

Thin crystalline silicon solar cells based on epitaxial films grown at 165 °C by RF-PECVD

Abstract

We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165 °C on highly doped p-type (1 0 0) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.5 μm. This absorber is responsible for photo-generated current whereas highly doped wafer behave like electric contact, as confirmed by external quantum efficiency measurements and simulations. A best conversion efficiency of 7% is obtained for a 2.4 μm thick cell with an area of 4 cm2, without any light trapping features. Moreover, the achievement of a fill factor as high as 78.6% is a proof that excellent quality of the epitaxial layers can be produced at such low temperatures.
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Cariou_-_Thin_crystalline_silicon_solar_cells_based_on_epitaxial_films_grown_at_165A_C_by_RF-PECVD_-_Sol._Energy_Mater._Sol._Cells_95_2011_2260-2263.pdf (610.89 Ko) Télécharger le fichier
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Dates and versions

hal-00749873 , version 1 (10-12-2012)
hal-00749873 , version 2 (07-03-2013)
hal-00749873 , version 3 (14-05-2013)

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Romain Cariou, Martin Labrune, Pere Roca I Cabarrocas. Thin crystalline silicon solar cells based on epitaxial films grown at 165 °C by RF-PECVD. Solar Energy Materials and Solar Cells, 2011, 95 (8), pp.2260-2263. ⟨10.1016/j.solmat.2011.03.038⟩. ⟨hal-00749873v3⟩
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